This technology can be used in metal contacts for electronic devices.
As current transistor architectures approach the physical limit for silicon electronics, alternative materials and fabrication methodologies are desired in order to continue the decreasing trend in the size of the devices while increasing performance. Conventionally, metals are used as the contact electrodes for silicon devices. However, a metal-semiconductor junction is fundamentally limited by the Schottky barrier, which impedes flow of charge carriers resulting in limited allowable current density for the device. This technology uses graphene to overcome these interface limitations.
This technology uses graphene-based hybrid structures to fabricate the contacts for the electronic devices. A graphene-based electrode can be configured with a tunable electron affinity that greatly reduces or even eliminates the Schottky barrier between the electrode and many different types of semiconductor materials, including silicon. This makes the device operate with very low contact resistance, high current density, and high thermal conductivity while simultaneously providing greater flexibility in the fabrication of the next-generation semiconductor devices.
- Low contact resistance
- High current carrying capability
- High thermal conductivity