Self-Aligned Gated Tip Arrays for Efficient Ionization of Gasses and Electron Emission

Non-Exclusively Licensed

Methods for fabrication of self-aligned gated tip arrays are described. The methods are performed on a multilayer structure that includes a substrate, an intermediate layer that includes a dielectric material disposed over at least a portion of the substrate, and at least one gate electrode layer disposed over at least a portion of the intermediate layer. The method includes forming a via through at least a portion of the at least one gate electrode layer. The via through the at least one gate electrode layer defines a gate aperture. The method also includes etching at least a portion of the intermediate layer proximate to the gate aperture such that an emitter structure at least partially surrounded by a trench is formed in the multilayer structure.

Researchers

Departments: Dept of Electrical Engineering & Computer Science, Microsystems Technology Laboratories
Technology Areas: Chemicals & Materials: Nanotechnology & Nanomaterials / Electronics & Photonics: Photonics, Semiconductors / Industrial Engineering & Automation: Manufacturing & Equipment

  • self-aligned gated tip arrays for efficient ionization of gasses and electron emission
    United States of America | Granted | 9,196,447

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