Selective Polycrystalline Silicon Defect-State Detector Formation
Exclusively Licensed
Invention type: Technology
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Case number: #16584J
Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.
Researchers
Rajeev Ram
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Ofer Tehar-Zahav
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Efraim Megged
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Zvi Sternberg
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Roy Meade
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Jeffrey Shainline
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Karan Mehta
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Vladimir Stojanovic
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Jason Orcutt
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Milos Popovic
Departments: Dept of Electrical Engineering & Computer Science
Technology Areas: Chemicals & Materials: Nanotechnology & Nanomaterials / Electronics & Photonics: Photonics, Semiconductors / Sensing & Imaging: Chemical & Radiation Sensing, Optical Sensing
Impact Areas: Connected World, Advanced Materials
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method and optoelectronic structure providing polysilicon photonic devices with different optical properties in different regions
United States of America | Granted | 9,768,330
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