New Structure and Technology for Power Semiconductor Devices

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An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

Researchers

Tomas Palacios / Elison Matioli / Bin Lu

Departments: Dept of Electrical Engineering & Computer Science
Technology Areas: Chemicals & Materials: Composites, Metals / Electronics & Photonics: Semiconductors
Impact Areas: Advanced Materials

  • semiconductor devices having a recessed electrode structure
    China | Granted | 0
  • semiconductor devices having a recessed electrode structure
    United States of America | Granted | 9,041,003
  • diode having trenches in a semiconductor region
    United States of America | Granted | 9,293,538

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