New Structure and Process Technology for High Linearity in GaN Transistors
Exclusively Licensed
Invention type: Technology
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Case number: #16166
A field effect transistor that has a source, a drain, a gate and a semiconductor region. The semiconductor region has a source access region between the gate and the source, a drain access region between the gate and the drain, and a channel region under the gate. The channel region under the gate has a maximum current-carrying capability that is lower than a maximum current-carrying capability of the source access region.
Researchers
Tomas Palacios
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Dong Lee
Departments: Dept of Electrical Engineering & Computer Science
Technology Areas: Chemicals & Materials: Nanotechnology & Nanomaterials / Electronics & Photonics: Semiconductors
Impact Areas: Connected World, Advanced Materials
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improving linearity in semiconductor devices
United States of America | Granted | 9,711,594
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