New Devices Based on Si/Nitride Structures

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A nitride-based semiconductor device is provided. The nitride-base semiconductor device includes a substrate comprising one or more locally etched regions and a buffer layer comprising one or multiple InAlGaN layers on the substrate. A channel layer includes GaN on the buffer layer. A barrier layer includes one or multiple AlGaN layers on the channel layer.

Researchers

Tomas Palacios / Jinwook Chung

Departments: Dept of Electrical Engineering & Computer Science
Technology Areas: Chemicals & Materials: Catalysis & Synthesis, Nanotechnology & Nanomaterials / Electronics & Photonics: Semiconductors / Energy & Distribution: Electrochemical Devices

  • devices based on si/nitride structures
    United States of America | Granted | 8,188,459

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