Graphene-Based Layer Transfer Process for Advanced Cost-Efficient Electronics/Photonics
A graphene-based layer transfer (GBLT) technique is disclosed. In this approach, a device layer including a III-V semiconductor, Si, Ge, III-N semiconductor, SiC, SiGe, or II-VI semiconductor is fabricated on a graphene layer, which in turn is disposed on a substrate. The graphene layer or the substrate can be lattice-matched with the device layer to reduce defect in the device layer. The fabricated device layer is then removed from the substrate via, for example, a stressor attached to the device layer. In GBLT, the graphene layer serves as a reusable and universal platform for growing device layers and also serves a release layer that allows fast, precise, and repeatable release at the graphene surface.
Researchers
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systems and methods for graphene based layer transfer
European Patent Convention | Published application -
systems and methods for graphene based layer transfer
United States of America | Granted | 10,770,289 -
systems and methods for graphene based layer transfer
China | Published application -
systems and methods for graphene based layer transfer
Japan | Granted | 6,938,468 -
systems and methods for graphene based layer transfer
Korea (south) | Published application -
systems and methods for graphene based layer transfer
China | Published application
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