Graphene-Based Layer Transfer Process for Advanced Cost-Efficient Electronics/Photonics

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A graphene-based layer transfer (GBLT) technique is disclosed. In this approach, a device layer including a III-V semiconductor, Si, Ge, III-N semiconductor, SiC, SiGe, or II-VI semiconductor is fabricated on a graphene layer, which in turn is disposed on a substrate. The graphene layer or the substrate can be lattice-matched with the device layer to reduce defect in the device layer. The fabricated device layer is then removed from the substrate via, for example, a stressor attached to the device layer. In GBLT, the graphene layer serves as a reusable and universal platform for growing device layers and also serves a release layer that allows fast, precise, and repeatable release at the graphene surface.

Researchers

Departments: Department of Mechanical Engineering
Technology Areas: Chemicals & Materials: Nanotechnology & Nanomaterials / Electronics & Photonics: Photonics, Semiconductors

  • systems and methods for graphene based layer transfer
    European Patent Convention | Published application
  • systems and methods for graphene based layer transfer
    United States of America | Granted | 10,770,289
  • systems and methods for graphene based layer transfer
    China | Published application
  • systems and methods for graphene based layer transfer
    Japan | Granted | 6,938,468
  • systems and methods for graphene based layer transfer
    Korea (south) | Published application
  • systems and methods for graphene based layer transfer
    China | Published application

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