Geiger-Mode Avalanche Photodiode Arrays Fabricated on Silicon on Insulator
Invention type: Technology
/
Case number: #24158L
Fabrication of avalanche photodiodes on a first wafer for operation in Geiger mode and integration with read-out integrated circuits (ROICs), fabricated on a second wafer, are described. Photodiode arrays are fabricated using a thin epitaxial layer grown on a semiconductor-on-insulator wafer. Chips are diced from the first wafer and bump bonded to chips diced from the second wafer.
Researchers
Departments: Lincoln Laboratory
Technology Areas: Electronics & Photonics: Photonics, Semiconductors / Energy & Distribution: Energy Storage
Impact Areas: Connected World, Advanced Materials
-
geiger-mode avalanche photodiode arrays fabricated on silicon on insulator substrates
United States of America | Published application
License this technology
Interested in this technology? Connect with our experienced licensing team to initiate the process.
Sign up for technology updates
Sign up now to receive the latest updates on cutting-edge technologies and innovations.