Distributed Current Low-Resistance Diamond Ohmic Contacts
Invention type: Technology
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Case number: #21129LJ
In some embodiments, a semiconductor structure can include: a diamond substrate having a surface conductive layer; a heavily doped region formed in the diamond substrate; and a metal contact positioned over the conductive surface layer such that a first portion of the heavily doped region is covered by the metal contact and a second portion of the heavily doped region is not covered by the metal contact.
Researchers
Michael Geis
/ Joseph Varghese
/ Timothy Grotjohn
Departments: Lincoln Laboratory
Technology Areas: Chemicals & Materials: Nanotechnology & Nanomaterials / Electronics & Photonics: Semiconductors
Impact Areas: Connected World
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distributed current low-resistance diamond ohmic contacts
United States of America | Granted | 11,222,956
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