Controlling Epitaxial GaAsP/SiGe Hetervalent Interfaces
Exclusively Licensed
Invention type: Technology
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Case number: #15888
Initiation conditions and strain techniques are described that enable forming high quality GaAsP semiconductor material on an SiGe semiconductor material with low threading defect density. Suitable initiation conditions include exposing the SiGe semiconductor material to a gas comprising arsenic. A tensilely-strained region may be formed in the semiconductor structure between regions of GaAsP semiconductor material and SiGe semiconductor material.
Researchers
Eugene Fitzgerald
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Prithu Sharma
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Timothy Milakovich
Departments: Department of Materials Science and Engineering
Technology Areas: Chemicals & Materials: Nanotechnology & Nanomaterials / Electronics & Photonics: Photonics, Semiconductors
Impact Areas: Connected World, Advanced Materials
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controlling gaasp/sige interfaces
United States of America | Granted | 9,490,330
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