Vapor-Deposited Nanoscale Ionic Liquid Gels as Gate Insulators for Low-Voltage High-Speed Thin Film Transistors
Invention type: Technology
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Case number: #19800
Described are materials and methods for fabricating low-voltage MHz ion-gel-gated thin film transistor devices using patternable defect-free ionic liquid gels. Ionic liquid gels made by the initiated chemical vapor deposition methods described herein exhibit a capacitance of about 1 μF cm−2 at about 1 MHz, and can be as thin as about 20 nm to about 400 nm.
Researchers
Andong Liu
/ Minghui Wang
/ Karen Gleason
Departments: Department of Chemical Engineering
Technology Areas: Chemicals & Materials: Composites, Polymers / Electronics & Photonics: Semiconductors
Impact Areas: Advanced Materials
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vapor-deposited nanoscale ionic liquid gels as gate insulators for low-voltage high-speed thin film transistors
United States of America | Granted | 10,510,971 -
vapor-deposited nanoscale ionic liquid gels as gate insulators for low-voltage high-speed thin film transistors
Patent Cooperation Treaty | Published application
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