Unconventional Nitride-on-Si Substrate Structures
Exclusively Licensed
Invention type: Technology
/
Case number: #14643
A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.
Researchers
Tomas Palacios
/
Elison Matioli
/
Bin Lu
Departments: Dept of Electrical Engineering & Computer Science
Technology Areas: Chemicals & Materials: Composites, Nanotechnology & Nanomaterials / Electronics & Photonics: Photonics, Semiconductors
Impact Areas: Advanced Materials
-
reducing leakage current in semiconductor devices
United States of America | Granted | 9,911,813
Sign up for technology updates
Sign up now to receive the latest updates on cutting-edge technologies and innovations.