Synthesis of Nanoporous Semiconductor Materials Via Metal-Assisted Chemical Etching

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Methods for forming nanoporous semiconductor materials are described. The methods allow for the formation of micron-scale arrays of sub-10nm nanopores in semiconductor materials with narrow size distributions and aspect ratios of over 400:1.

Researchers

Jeffrey C. Grossman / Jatin Patil / Brendan Smith / Nicola Ferralis

Departments: Department of Materials Science and Engineering
Technology Areas: Chemicals & Materials: Catalysis & Synthesis, Nanotechnology & Nanomaterials / Electronics & Photonics: Semiconductors / Industrial Engineering & Automation: Manufacturing & Equipment
Impact Areas: Advanced Materials

  • nanoporous semiconductor materials and manufacture thereof
    China | Granted | 109,072,451
  • nanoporous semiconductor materials
    United States of America | Granted | 10,943,982
  • nanoporous semiconductor materials and manufacture thereof
    United States of America | Granted | 10,128,341

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