Synthesis of Nanoporous Semiconductor Materials Via Metal-Assisted Chemical Etching
Exclusively Licensed
Invention type: Technology
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Case number: #18355
Methods for forming nanoporous semiconductor materials are described. The methods allow for the formation of micron-scale arrays of sub-10nm nanopores in semiconductor materials with narrow size distributions and aspect ratios of over 400:1.
Researchers
Jeffrey C. Grossman
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Jatin Patil
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Brendan Smith
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Nicola Ferralis
Departments: Department of Materials Science and Engineering
Technology Areas: Chemicals & Materials: Catalysis & Synthesis, Nanotechnology & Nanomaterials / Electronics & Photonics: Semiconductors / Industrial Engineering & Automation: Manufacturing & Equipment
Impact Areas: Advanced Materials
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nanoporous semiconductor materials and manufacture thereof
China | Granted | 109,072,451 -
nanoporous semiconductor materials
United States of America | Granted | 10,943,982 -
nanoporous semiconductor materials and manufacture thereof
United States of America | Granted | 10,128,341
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