Silicon Nano Light Emitting Diodes
Invention type: Technology
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Case number: #22935DE
Light-emitting diodes having radiative recombination regions with deep sub-micron dimensions are described. The LEDs can be fabricated from indirect bandgap semiconductors and operated under forward bias conditions to produce intense light output from the indirect bandgap material. The light output per unit emission area can be over 500 W cm−2, exceeding the performance of even high brightness gallium nitride LEDs.
Researchers
Jaehwan Kim
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Jin Xue
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Zheng Li
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Rajeev Ram
Departments: Dept of Electrical Engineering & Computer Science
Technology Areas: Chemicals & Materials: Nanotechnology & Nanomaterials / Electronics & Photonics: Photonics
Impact Areas: Advanced Materials
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silicon nano light emitting diodes
United States of America | Granted | 11,756,983
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