Precise Confinement of Conductive Filament in ECM(electrochemical Metallization) RRAM (Random Read Access Memory)

Electrical switching technologies employ the otherwise undesirable line defect in crystalline materials to form conductive filaments. A switching cell includes a crystalline layer disposed between an active electrode and another electrode. The crystalline layer has at least one channel, such as a line defect, extending from one surface of the crystalline layer to the other surface. Upon application of a voltage on the two electrodes, the active electrode provides metal ions that can migrate from the active electrode to the other electrode along the line defect, thereby forming a conductive filament. The switching cell can precisely locate the conductive filament within the line defect and increase the device-to-device switching uniformity.