Nanoporous Silicon Membrane
Exclusively Licensed
Invention type: Technology
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Case number: #19570
Methods for forming porous or nanoporous semiconductor materials are described. The methods allow for the formation of arrays pores or nanopores in semiconductor materials with advantageous pore size, spacing, pore volume, material thickness, and other aspects. Porous and nanoporous materials also are provided.
Researchers
Jeffrey C. Grossman
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Brendan Smith
Departments: Department of Materials Science and Engineering
Technology Areas: Chemicals & Materials: Nanotechnology & Nanomaterials / Electronics & Photonics: Semiconductors
Impact Areas: Advanced Materials
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porous and nanoporous semiconductor materials and manufacture thereof
European Patent Convention | Published application -
porous and nanoporous semiconductor materials and manufacture thereof
United States of America | Granted | 11,004,943 -
porous and nanoporous semiconductor materials and manufacture thereof
China | Published application
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