Low-Temperature Synthesis of Two-Dimensional Materials

Exclusively Licensed

Described herein is a method for depositing a two-dimensional material film on a substrate. In some embodiments, the method comprises using a reactor with two regions to decompose the first precursor. In some embodiments, the method comprises placing one or more substrates into the lower temperature region to help accelerate the decomposition of the precursors. In some embodiments, the method comprises placing one or more substrates into the lower temperature region, wherein the temperature will not be high enough to damage the substrate or its nanostructures. In some embodiments, the method comprises depositing a two-dimensional material film and fabricating two-dimensional material devices and circuits at the back end of silicon CMOS circuits. 

Researchers

Jing Kong / Ji Hoon Park / Jiadi Zhu / Jiangtao Wang / Tomas Palacios

Departments: Dept of Electrical Engineering & Computer Science
Technology Areas: Chemicals & Materials: Polymers / Electronics & Photonics: Lasers / Energy & Distribution: Electrochemical Devices / Industrial Engineering & Automation: Manufacturing & Equipment
Impact Areas: Advanced Materials

  • low-temperature synthesis of two-dimensional material
    United States of America | Pending
  • low-temperature synthesis of two-dimensional material
    Patent Cooperation Treaty | Published application

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