Low-Temperature Single-Crystal 2D Materials Growth using Trench Patterns
                                                                                        
                                    Exclusively Licensed
                                
                            
                            
                            
                                                    
                    
                    
                                                                            Invention type: Technology
                                    
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                                                                            Case number: #24966
                                                                    
                                Researchers
                            
    
    Jeehwan Kim
 / 
    
    
    Seunghwan Seo
 / 
    
    Kiseok Kim
 / 
    
    
    DoYoon Lee
                        
                    
                                        Departments: Department of Mechanical Engineering, Research Laboratory of Electronics, Materials Science and Eng
                                    
                                
                                                                    
                                        Technology Areas: 	Chemicals & Materials: Nanotechnology & Nanomaterials  / Electronics & Photonics: Semiconductors 
                                    
                                
                                                                    
                                        Impact Areas: Advanced Materials
                                    
                                                            - 
            low-temperature single-crystal 2d materials growth using trench patterns
 Patent Cooperation Treaty | Published application
- 
            low-temperature single-crystal 2d materials growth using trench patterns
 Japan | Pending
- 
            low-temperature single-crystal 2d materials growth using trench patterns
 China | Pending
- 
            low-temperature single-crystal 2d materials growth using trench patterns
 Korea (south) | Pending
- 
            low-temperature single-crystal 2d materials growth using trench patterns
 European Patent Convention | Pending
- 
            low-temperature single-crystal 2d materials growth using trench patterns
 United States of America | Pending
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