Low-Temperature Single-Crystal 2D Materials Growth using Trench Patterns
Exclusively Licensed
Invention type: Technology
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Case number: #24966
Researchers
Jeehwan Kim
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Seunghwan Seo
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Kiseok Kim
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DoYoon Lee
Departments: Department of Mechanical Engineering, Research Laboratory of Electronics, Materials Science and Eng
Technology Areas: Chemicals & Materials: Nanotechnology & Nanomaterials / Electronics & Photonics: Semiconductors
Impact Areas: Advanced Materials
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low-temperature single-crystal 2d materials growth using trench patterns
Patent Cooperation Treaty | Published application -
low-temperature single-crystal 2d materials growth using trench patterns
Japan | Pending -
low-temperature single-crystal 2d materials growth using trench patterns
China | Pending -
low-temperature single-crystal 2d materials growth using trench patterns
Korea (south) | Pending -
low-temperature single-crystal 2d materials growth using trench patterns
European Patent Convention | Pending -
low-temperature single-crystal 2d materials growth using trench patterns
United States of America | Pending
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