Lithium Titanate Memristor

Resistive switching devices that contain lithium, including resistive switching devices containing a lithium titanate, and associated systems and methods are generally described. In some cases, the resistive switching device contains a lithium titanate- containing domain, a first electrode, and a second electrode. In some cases, the application of an electrical potential to the resistive switching device causes a change in resistance state of the lithium titanate-containing domain. The resistive switching devices described herein may be useful as memristors, and in applications that include Resistive-random access memory and neuromorphic computing.