Improved Semiconductor Surface Passivation

A new process that enables void-free direct-bonded MBE-passivated large-format image sensors is disclosed. This process can be used to produce thin large-area image sensors for UV and soft x-ray imaging. Such devices may be valuable in future astronomy missions or in the radiology field. Importantly, by controlling the hydrogen concentration in the silicon oxide layers of the image sensor and the support wafer, voids in the bonding interface can be significantly reduced or eliminated. This process can be applied to any wafer that includes active circuitry and requires a second wafer, such as a support wafer.