High Voltage Organic Semiconductor Based Thin Film Transistor

Technology  

To combat the problems associated with FETs, a high voltage field effect transistor has been fabricated using thin-film organic semiconductor technology.  High driving voltages are achieved by offsetting the drain or source electrode from the gate creating an un-gated semiconductor region in series with a gated semiconductor region. This achievement represents the first demonstration of integrated high voltage thin film transistors based on an organic semiconductor technology with a low temperature (< 95 degrees Fahrenheit), completely lithographic manufacturing process that is compatible with both rigid and flexible substrates.   

Problem Addressed    

FETs are widely used as pixel addressing elements. However many applications of FETs require drive voltages larger than 100 V with relatively small input voltages.  

Advantages

• Achieves high output voltage with organic semiconductor technology
• Uses a low temperature (<95 degrees Fahrenheit) process for manufacturing, potentially enabling low cost roll-to-roll printing technology
• Compatible with both rigid and flexible substrates  

Publications

"High Power, Flexible Electronics." IDTechEx: Printed Electronics 2013, November 1, 2013.

"A Lithographic Process for Integrated Organic Field Effect Transistors." Journal of Display Technology 1, no. 2 (2005): 289-294.

"Top Contact Organic Field Effect Transistors Fabricated Using a Photolithographic Process." Chinese Physics B 20, no. 8 (2011): 087306.

"Tunable Threshold Voltage and Flatband Voltage in Pentacene Field Effect Transistors." Applied Physics Letters 89, no. 11 (2006): 112109.