Growth of Transition Metal Dichalcogenide Layers from Corresponding Metal Powders
Invention type: Technology
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Case number: #20074
Researchers
Jing Kong
/ Qingqing Ji
/ Zhenfei Gao
Departments: Dept of Electrical Engineering & Computer Science
Technology Areas: Chemicals & Materials: Metals, Nanotechnology & Nanomaterials / Electronics & Photonics: Semiconductors
Impact Areas: Advanced Materials
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in situ generation of gaseous precursors for chemical vapor deposition of a chalcogenide
United States of America | Granted | 11,060,186
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