GaN Circuits with Higher RF Linearity

A semiconductor device having relatively linear and constant parasitic capacitance of an operation range includes a first component having a negatively charged carrier channel and a second component comprising a positively charged carrier channel. The first component has source terminal and a drain terminal. The second component has bias terminal. Both components share a gate terminal that is electrostatically coupled to the negatively charged carrier channel of the first component and the positively charged carrier channel of the second component to produce a capacitance profile that stays relatively linear and constant as a voltage at the gate terminal changes.