Doped Encapsulating Material to Stabilize Diamond's Electrical Properties
Invention type: Technology
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Case number: #21130LJ
According to some embodiments, a method for stabilizing electrical properties of a diamond semiconductor comprises terminating a surface of a diamond with hydrogen (H) or deuterium (D) atoms and over-coating the surface of the diamond with an encapsulating material comprising metal oxide salt doped with one or more elements capable of generating negative charge in the metal oxide salt.
Researchers
Michael Geis
/ Joseph Varghese
/ Robert Nemanich
Departments: Lincoln Laboratory
Technology Areas: Chemicals & Materials: Catalysis & Synthesis, Nanotechnology & Nanomaterials / Electronics & Photonics: Semiconductors
Impact Areas: Advanced Materials
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doped encapsulating material for diamond semiconductors
United States of America | Granted | 11,152,483
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