Threshold Voltage-Engineered Nitride-Based High Performance Transistors for High Frequency and/or High-Power Electronics
Exclusively Licensed
Invention type: Technology
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Case number: #19203
A transistor includes a first gate-controlled region having a first threshold voltage and a second gate-controlled region in parallel with the first gate-controlled region. The second gate-controlled region has a second threshold voltage different form the first threshold voltage.
Researchers
Tomas Palacios
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Ujwal Radhakrishna
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Sameer Jayanta-Joglekar
Departments: Dept of Electrical Engineering & Computer Science
Technology Areas: Computer Science: Networking & Signals / Electronics & Photonics: Photonics, Semiconductors
Impact Areas: Connected World
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high-linearity transistors
United States of America | Granted | 10,439,059
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