Threshold Voltage-Engineered Nitride-Based High Performance Transistors for High Frequency and/or High-Power Electronics

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A transistor includes a first gate-controlled region having a first threshold voltage and a second gate-controlled region in parallel with the first gate-controlled region. The second gate-controlled region has a second threshold voltage different form the first threshold voltage.

Researchers

Tomas Palacios / Ujwal Radhakrishna / Sameer Jayanta-Joglekar

Departments: Dept of Electrical Engineering & Computer Science
Technology Areas: Computer Science: Networking & Signals / Electronics & Photonics: Photonics, Semiconductors
Impact Areas: Connected World

  • high-linearity transistors
    United States of America | Granted | 10,439,059

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