Process for Creating Novel Monolithic Circuits with New Materials
Exclusively Licensed
Invention type: Technology
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Case number: #15536
A method includes attaching a partially processed CMOS wafer to a second wafer to produce a combined wafer. The second wafer comprises a first region including a material different from silicon. The method also includes forming devices in the first region or in a second region of the combined wafer having a material different from silicon.
Researchers
Departments: Department of Materials Science and Engineering
Technology Areas: Chemicals & Materials: Composites, Nanotechnology & Nanomaterials / Electronics & Photonics: Semiconductors / Industrial Engineering & Automation: Manufacturing & Equipment
Impact Areas: Connected World, Advanced Materials
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monolithic integration of cmos and non-silicon devices
United Kingdom | Granted | 2,834,850 -
monolithic integration of cmos and non-silicon devices
Korea (south) | Granted | 10 -
monolithic integration of cmos and non-silicon devices
United States of America | Granted | 9,530,763 -
monolithic integration of cmos and non-silicon devices
European Patent Convention | Granted | 2,834,850 -
monolithic integration of cmos and non-silicon devices
Japan | Granted | 6,060,252 -
monolithic integration of cmos and non-silicon devices
Germany | Granted | 2,834,850 -
monolithic integration of cmos and non-silicon devices
France | Granted | 2,834,850
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