New Wafer Bonding Technology and its Applications in Nitride Semiconductor

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A semiconductor arrangement is provided that includes one or more substrate structures. One or more nitride-based material structures are used in fabricating nitride-based devices. One or more intermediary layers are interposed between the one or more substrate structures and the one or more nitride-based material structures. The one or more intermediary layers support the lattice mismatch and thermal expansion coefficients between the one or more nitride-based material structure and the one or more substrate structures. Several new electronic devices based on this arrangement are described.

Researchers

Tomas Palacios / Han Wang / Jinwook Chung

Departments: Dept of Electrical Engineering & Computer Science
Technology Areas: Chemicals & Materials: Composites, Metals / Electronics & Photonics: Photonics, Semiconductors / Industrial Engineering & Automation: Manufacturing & Equipment

  • fabrication technique for gallium nitride substrates
    United States of America | Granted | 8,703,623

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