New Enhancement-Mode Nitride Transistor

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A heterojunction for use in a transistor structure is provided. The heterojunction includes a barrier layer positioned beneath a gate region of the transistor structure. The barrier layer includes nitride-based semiconductor materials. A channel layer provides electrical conduction An intermediate layer near the barrier layer and including nitride-based semiconductor materials having a wider bandgap than the channel layer.

Researchers

Tomas Palacios / Bin Lu

Departments: Dept of Electrical Engineering & Computer Science
Technology Areas: Chemicals & Materials: Nanotechnology & Nanomaterials / Electronics & Photonics: Photonics, Quantum Technology / Energy & Distribution: Electrochemical Devices

  • enhancement-mode nitride transistor
    United States of America | Granted | 8,759,876

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