New Enhancement-Mode Nitride Transistor
Exclusively Licensed
Invention type: Technology
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Case number: #13294
A heterojunction for use in a transistor structure is provided. The heterojunction includes a barrier layer positioned beneath a gate region of the transistor structure. The barrier layer includes nitride-based semiconductor materials. A channel layer provides electrical conduction An intermediate layer near the barrier layer and including nitride-based semiconductor materials having a wider bandgap than the channel layer.
Researchers
Tomas Palacios
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Bin Lu
Departments: Dept of Electrical Engineering & Computer Science
Technology Areas: Chemicals & Materials: Nanotechnology & Nanomaterials / Electronics & Photonics: Photonics, Quantum Technology / Energy & Distribution: Electrochemical Devices
Impact Areas: Connected World, Advanced Materials
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enhancement-mode nitride transistor
United States of America | Granted | 8,759,876
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