Enhancement-Mode MOS Semiconductor Transistors with High Threshold Voltage
Exclusively Licensed
Invention type: Technology
/
Case number: #16358
A field effect transistor that has a source, a drain, a gate, a semiconductor region, and a dielectric region. The dielectric region is located between the semiconductor region and the gate. Negatively charged ions are located within the dielectric layer underneath the gate.
Researchers
Tomas Palacios
/
Yuhao Zhang
Departments: Dept of Electrical Engineering & Computer Science
Technology Areas: Electronics & Photonics: Semiconductors / Energy & Distribution: Distribution
Impact Areas: Connected World
-
enhancement-mode transistors with increased threshold voltage
United States of America | Granted | 9,704,959
Sign up for technology updates
Sign up now to receive the latest updates on cutting-edge technologies and innovations.