Enhancement-Mode MOS Semiconductor Transistors with High Threshold Voltage
Exclusively Licensed
Invention type: Technology
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Case number: #16358
A field effect transistor that has a source, a drain, a gate, a semiconductor region, and a dielectric region. The dielectric region is located between the semiconductor region and the gate. Negatively charged ions are located within the dielectric layer underneath the gate.
Researchers
Tomas Palacios
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Yuhao Zhang
Departments: Dept of Electrical Engineering & Computer Science
Technology Areas: Electronics & Photonics: Semiconductors / Energy & Distribution: Distribution
Impact Areas: Connected World
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enhancement-mode transistors with increased threshold voltage
United States of America | Granted | 9,704,959
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