Chemical Vapor Transport Growth of Monolayer Transition Metal Dichalcogenides

A two-dimensional transition-metal dichalcogenide layer is grown by reacting a non- or low-volatile source material with a volatilized halogen or halide compound to produce a volatilized composition comprising at least one reaction product. The volatilized composition is flowed through an open chamber of a tube furnace with a temperature gradient, wherein the temperature changes along a path through which the volatilized composition flows through the open chamber of the tube furnace. Where the temperature along the path in the open chamber is in a reaction-temperature range, the volatilized composition is deposited as a two-dimensional crystalline transition-metal dichalcogenide layer.

Researchers

Jing Kong / Brian Modtland / Efren Adolfo Navarro Moratalla / Xiang Ji / Marc Baldo

Departments: Dept of Electrical Engineering & Computer Science, Office of the Vice President for Research
Technology Areas: Chemicals & Materials: Catalysis & Synthesis, Nanotechnology & Nanomaterials / Industrial Engineering & Automation: Manufacturing & Equipment
Impact Areas: Advanced Materials

  • chemical vapor transport growth of two-dimensional transition-metal dichalcogenides
    United States of America | Granted | 10,988,842

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