This resistive switching device combines multiple technologies in a way that revolutionizes the field of RS devices. A simple RS device consists of a top electrode, an oxide material, and a bottom electrode. RS behavior comes from the formation and dissipation of an oxygen vacancy filament between these layers. Certain processing factors are paramount in achieving good switching characteristics that have not been identified in the prior art. Factors affecting device behavior include material choices for the electrodes and oxide as well as thicknesses of individual layers. Other control parameters can be tuned when integrating RS devices into large arrays. For example, doping is a rich tuning parameter as it grants the choice of dopant material and doping profile/distribution. Gold metal dopants improve switching consistency and eliminate the need for a low-yield electroforming step during fabrication. Another strategy is fragmentation of a thick oxide layer into multiple thinner oxides. This lifts the restriction of needing to find different, but suitable, oxide materials to tap into the benefits of using multilayer films. The multiple oxide layers significantly improve consistencies across cycles and across devices while sharpening the LRS to HRS transition. These features are important for achieving good switching characteristics.