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The proposed technology is a method for augmenting directed self-assembly through the removal of physical templating features. In the procedure, the physical template is first constructed using electron beam lithography applied to a silicon substrate. Next, a thin film of block copolymers is spin coated over the substrate filling in the outline provided by the template spaces. Then a carbon tetrafluoride and oxygen reactive ion etch is used to remove the top of the spin coated layer and the taller features of the template. Finally, using directional etching the pattern is transferred to a desired substrate. In all, the fundamental step  of removing the template allows the templated block copolymer to be used as a functional pattern without interference from the physical templating features.