This technology eliminates the effect of the static friction on the NEM switch by incorporating a non-conducting deformable spring-like molecular layer between the switch terminals, thus increasing reliability. The stiffness of the layer is engineered to lower the required actuation voltage appropriate for CMOS applications. Instead of using direct contact between the switch terminals as the mechanism for the current conduction, the invention uses tunneling currents that enables six orders of magnitude difference between the on and off state current of the switch. The switch is projected to be reliable and easily fabricated in a variety of structural shapes and orientation based on  the necessity of the end application.