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  • Interference Lithography (IL) enables one to rationally design complex and defect-free 1D, 2D and 3D patterns over large areas
  • IL also affords control over geometrical parameters, such as symmetry and volume fractions, of the structures formed
  • IL performed using an elastomeric PDMS phase mask provides simple and inexpensive processing, since only a single collimated beam is needed to form 3D interference patterns