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The invention consists of a hybrid approach to nanopatterning which first uses the precision of electron beam lithography to define nodes as an outline to patterning and then uses self assembled block copolymers to rapidly fill in the intervening space between the nodes and hence define an overall pattern. By using electron beam lithography to only pattern the nodes - and not the entire design - there is a 30 fold increase in speed of patterning thus allowing technologies which require high resolution patterning to fabricate structures in a realistic and cost effective time.