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Problem Addressed

HEMT efficiency is limited by a current collapse phenomena in Gallium Nitride (GaN) metal-semiconductor field effect transistors.  Current collapse occurs when the GaN on-resistance increases and current decreases during the application of high voltage to the device. Pronounced current collapse (40% or greater) in C-doped GaN HEMTs is observed when the GaN buffer layer is < 2 microns. This technology uses metal organic chemical vapor deposition (MOCVD) to create a patterned region between GaN and the substrate to reduce current collapse.