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Problem Addressed

On-chip electro-optic interfaces in microelectronic CMOS processes present a potential for large-scale optoelectronic systems with high-speed signal processing and high-performance sensors. In order to keep the system cost and space effective, photonic integration without in-foundry process modifications is required. Although substantial progress has been made with optical links and interconnects, wavelength restrictions make optoelectronic systems inappropriate for Ethernet (1310 nm required) and telecommunications applications (1550 nm primarily used). This is the first 1550 nm defect states based photodetector integrated in zero-change CMOS.