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This technology uses existing design rules and the IBM 45nm CMOS process to create a waveguide-coupled photodetector. The photodetector consists of a ring resonator with silicon-germanium regions that generate photocarriers. The resonant structure increases the quantum efficiency compared to a straight photodiode along with having high Q factors  between 10000 and 50000. High bandwidth for the photodiode is obtained by forming a junction inside the silicon-germanium region. Good electrical contact is achieved by placing the anode and cathode of the diode directly on the silicon instead of silicon-germanium.