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Problem Addressed

Previous attempts at incorporating a dielectric layer to achieve low leakage at high power/temperature operation and improved reliability were unsuccessful in achieving the ideal combination of a large critical electric field and a good interface between the oxide and the semiconductor. The limited critical field of conventional transistors made of silicon leads to bulky commercial devices that operate at low frequencies and require high resistances. This invention creates a semiconductor interface within HEMTs that leads to gate stacks with low interface states density and large critical electric fields necessary for high power operations. This allows for the creation of reliable, high-efficiency power electronics.