A conventional memristive switching device consists of two electrodes which are separated by a thin insulating layer. Usually, this device geometry is realized in a vertical stack of bottom electrode layer, insulating layer and top electrode layer. Application of a voltage or current across the insulating layer then typically results in the formation of a conductive filament through the insulating layer. However, conductive filament formation is a statistical process which is hard to control, difficult to predict, and usually occurs under conditions close to dielectric breakdown of the insulating layer. The proposed device is a three terminal device that does not rely on conductive filament formation for its memristive properties.