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This technology enables controlled growth of a semiconductor material (e.g., Gallium Arsenide Phosphide) on a silicon-germanium substrate. Instead of simply matching the lattice structure of the two materials at the interface boundary, the material fabrication methodology involves specially crafted strain-engineering technique that disrupts defect formation. The technique when augmented with proper initiation condition results in a substantial reduction in the defect density. This opens up a huge opportunity in the manufacturing of semiconducting materials with overall improved capabilities and device performance.