Header and Body 3

Technology

The charge sensor is an n-channel MOSFET that is electrostatically coupled to a strip of a-Si:H. The MOSFET is fabricated using standard techniques on a p-type silicon substrate. The n+ polysilicon gate of the MOSFET is patterned using electron beam lithography and reactive ion etching and tapers down to a width of ≈ 60nm. Because of its narrow width the MOSFET is extremely sensitive to its electrostatic environment.